Radiation induced failures of complementary metal oxide semiconductor containing pacemakers: a potentially lethal complication
New multi-programmable pacemakers frequently employ complementary metal oxide semiconductors (CMOS). This circuitry appears more sensitive to the effects of ionizing radiation when compared to the semiconductor circuits used in older pacemakers. A case of radiation induced runaway pacemaker in a CMOS device is described. Because of this and other recent reports of radiation therapy-induced CMOS type pacemaker failure, these pacemakers should not be irradiated. If necessary, the pacemaker can be shielded or moved to a site which can be shielded before institution of radiation therapy. This is done to prevent damage to the CMOS circuit and the life threatening arrythmias which may result from such damage.
- Research Organization:
- Univ. of Miami School of Medicine, FL
- OSTI ID:
- 6302440
- Journal Information:
- Int. J. Radiat. Oncol., Biol. Phys.; (United States), Vol. 10:10
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
62 RADIOLOGY AND NUCLEAR MEDICINE
CARDIAC PACEMAKERS
BIOLOGICAL RADIATION EFFECTS
CARDIOVASCULAR DISEASES
RADIOINDUCTION
RADIOTHERAPY
SIDE EFFECTS
METALS
OXIDES
PATIENTS
SEMICONDUCTOR DEVICES
BIOLOGICAL EFFECTS
CHALCOGENIDES
DISEASES
ELEMENTS
MEDICINE
NUCLEAR MEDICINE
OXYGEN COMPOUNDS
RADIATION EFFECTS
RADIOLOGY
THERAPY
560151* - Radiation Effects on Animals- Man
550603 - Medicine- External Radiation in Therapy- (1980-)