Effect of gate oxide thickness on the radiation hardness of silicon-gate CMOS

Nordstrom, T V; Gibbon, C F

Title: Effect of gate oxide thickness on the radiation hardness of silicon-gate CMOS

Full Record
Other Related Research

Abstract

Significant improvements have been made in the radiation hardness of silicon-gate CMOS by reducing the gate oxide thickness. The device studied is an 8-bit arithmetic logic unit designed with Sandia's Expanded Linear Array (ELA) standard cells. Devices with gate oxide thicknesses of 400, 570 (standard), and 700 A were fabricated. Irradiations were done at a dose rate of 2 x 10/sup 6/ rads (Si) per hour. N- and P-channel maximum threshold shifts were reduced by 0.3 and 1.2 volts, respectively, for the thinnest oxide. Approximately, a linear relationship is found for threshold shift versus thickness. The functional radiation hardness of the full integrated circuit was also measured.

Authors:: Nordstrom, T V; Gibbon, C F

Publication Date:: Thu Jan 01 00:00:00 EST 1981

Research Org.:: Sandia National Labs., Livermore, CA (USA)

OSTI Identifier:: 6294306

Report Number(s):: SAND-81-1680C; CONF-810707-7
ON: DE81027202; TRN: 81-014164

DOE Contract Number:: AC04-76DP00789

Resource Type:: Conference

Resource Relation:: Conference: IEEE conference on nuclear science and space radiation, Seattle, WA, USA, 21 Jul 1981

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; INTEGRATED CIRCUITS; RADIATION HARDENING; MOS TRANSISTORS; SPECIFICATIONS; ELECTRONIC CIRCUITS; HARDENING; MICROELECTRONIC CIRCUITS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems

Citation Formats


                    Nordstrom, T V, and Gibbon, C F. Effect of gate oxide thickness on the radiation hardness of silicon-gate CMOS.  United States: N. p., 1981. 
        Web.

Copy to clipboard


                    Nordstrom, T V, & Gibbon, C F. Effect of gate oxide thickness on the radiation hardness of silicon-gate CMOS.  United States.

Copy to clipboard


                    Nordstrom, T V, and Gibbon, C F. 1981.  
        "Effect of gate oxide thickness on the radiation hardness of silicon-gate CMOS".  United States.

Copy to clipboard


                    
@article{osti_6294306,

  title        = {Effect of gate oxide thickness on the radiation hardness of silicon-gate CMOS},

  author       = {Nordstrom, T V and Gibbon, C F},

  abstractNote = {Significant improvements have been made in the radiation hardness of silicon-gate CMOS by reducing the gate oxide thickness. The device studied is an 8-bit arithmetic logic unit designed with Sandia's Expanded Linear Array (ELA) standard cells. Devices with gate oxide thicknesses of 400, 570 (standard), and 700 A were fabricated. Irradiations were done at a dose rate of 2 x 10/sup 6/ rads (Si) per hour. N- and P-channel maximum threshold shifts were reduced by 0.3 and 1.2 volts, respectively, for the thinnest oxide. Approximately, a linear relationship is found for threshold shift versus thickness. The functional radiation hardness of the full integrated circuit was also measured.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/6294306},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Thu Jan 01 00:00:00 EST 1981},

  month        = {Thu Jan 01 00:00:00 EST 1981}

}

Copy to clipboard

Conference:

Other availability

Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share:

Export Metadata

Save to My Library

Similar records in OSTI.GOV collections:

Self-aligned phosphorus doped polysilicon gate MOS device radiation hardening

Journal Article Chang, C - IEEE Trans. Nucl. Sci.; (United States)

It is well known that processing steps strongly affect the radiation tolerance of MOS oxides. In this paper the authors present the effects of the ion implantation to form the source-drain regions of self-aligned polysilicon gate MOSFETs. Radiation hardness varies systematically with the n+ and the p+ ion implantation energies, and the masking polysilicon gate thickness. For a fixed polysilicon thickness, there is an optimum implantation energy allowed to give the best device performance and radiation behavior. Extending the implantation energy beyond the optimum tends to degrade the hardness. This is verified by the capacitor experiments. The shift in n-channelmore »« less
https://doi.org/10.1109/TNS.1982.4336432
Post-gate plasma and sputter process effects on the radiation hardness of metal gate CMOS integrated circuits

Conference Anderson, R

With the decreasing dimensions of todays IC's, more attention is being directed towards plasma processing for process simplification and improved control of dimensional tolerances. The desire for high reliability automated assembly techniques has led to the development of the gold bump technology for tape automated bonding. Furthermore, the development of the beam-lead technology continues. All these developments lead to increased use of plasma and sputter processes; therefore, the impact of these processes on radiation hardness must be evaluated. The devices employed in this investigation are CMOS 4007 inverters. They were processed according to the optimized baseline process sequence through Almore »« less
Thirty megarad CMOS gate array for spacecraft applications

Journal Article Voss, H; Hardage, C; Jones, F; ... - IEEE Trans. Nucl. Sci.; (United States)

The recent development, testing, qualification and integration for spacecraft applications of a general purpose, 30 Megarad-hard, CMOS logic gate array having 3000 transistors is reported. Fabricated on the National Semiconductor, Inc. class S radation-hard line, the gate array operates at >3 MHz (10V) after 10/sup 7/ rad(Si) total dose from a Co/sup 60/ source. The threshold voltage change is 0.2 volts (0.5 volts) for the n-channel (p-channel) devices under 10V bias conditions. The rad-hard process of the CDI gate array family is mask compatible with the conventional process for cost effective semicustom design. The rad-hard array is presently operating in-orbitmore »« less
https://doi.org/10.1109/TNS.1984.4333512
Radiation-hard CMOS/SOS standard cell circuits

Conference Palkuti, L; Pryor, R - IEEE Trans. Nucl. Sci.; (United States)

A new multiport silicon-gate, CMOS/SOS standard cell family that achieves transient upset and total dose hardness has been designed and evaluated. This radiation hardness was achieved by design and process procedures normally not considered in conventional CMOS/SOS circuits. To evaluate the cell family a test chip and arithmetic logic unit (ALU) integrated circuits were fabricated. The cell-family performance was characterized utilizing 60ns to 1..mu..s electron pulses from the LINAC and total dose gamma irradiation from the cobalt-60 source. The results show circuit upset at levels greater than 10/sup 11/ rad (Si)/s for short (60ns) irradiation pulses. Total dose irradiations tomore »« less
Radiation effects in a CMOS/SOS/Al-Gate D/A converter and on-chip diagnostic transistors

Conference Brucker, G; Heagerty, W - IEEE Trans. Nucl. Sci.; (United States)

This paper presents the results obtained from total dose and transient radiation tests on a CMOS/SOS/Al-Gate D/A converter and on-chip diagnostic transistors. Samples were irradiated by cobalt-60 gamma rays under worst-case conditions, and by 10-MeV electron pulses of 50-ns and 4.4-..mu..s duration. Devices were fabricated with three different insulators; the two discussed here are standard wet oxide and a pyrogenic oxide. Test transistors on the D/A chips made it possible to diagnose the failure modes of the converter and to evaluate some special designs. These consisted of standard edge p- and n-channel transistors, edgeless units, edgeless tetrode transistors, and anmore »« less

Similar Records