Sloped niobium etching using CF sub 4 and O sub 2

Journal Article · Thu Nov 01 00:00:00 EST 1990 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)

DOI:https://doi.org/10.1116/1.576420· OSTI ID:6292823

Sasserath, J N; Vivalda, J ^[1]

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1. Hypres Incorporated, 175 Clearbrook Road, Elmsford, New York 10523 (USA)

A sloped etching process for Nb is developed for pilot line operations. Reactive ion etching and plasma processes are compared for a CF{sub 4}/O{sub 2} parallel plate etch system. The higher pressure etches were found to have better characteristics for the numerous combinations of independent variables examined. Process settings tested include rf power, chamber pressure, and etchant flow rates. Higher Nb etch rates, photoresist:niobium etch rate selectivity of 1:1, and adequate selectivity over SiO{sub 2} were obtained with the plasma etches. For both types of processes, control of plasma loading affects were determined to be crucial to accomplish successful patterning. Finally, mathematical models of the etch process were derived from the data and used to determine basic etch mechanisms occurring within the reactor.

• OSTI ID: 6292823
• Journal Information: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Vol. 8:6; ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
NIOBIUM
ETCHING
CARBON TETRAFLUORIDE
FABRICATION
INTEGRATED CIRCUITS
ION BEAMS
OXIDATION
OXYGEN
PLASMA
SILICA
BEAMS
CHALCOGENIDES
CHEMICAL REACTIONS
ELECTRONIC CIRCUITS
ELEMENTS
FLUORINATED ALIPHATIC HYDROCARBONS
HALOGENATED ALIPHATIC HYDROCARBONS
METALS
MICROELECTRONIC CIRCUITS
MINERALS
NONMETALS
ORGANIC COMPOUNDS
ORGANIC FLUORINE COMPOUNDS
ORGANIC HALOGEN COMPOUNDS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
SILICON COMPOUNDS
SILICON OXIDES
SURFACE FINISHING
TRANSITION ELEMENTS
360101* - Metals & Alloys- Preparation & Fabrication