Electronic-carrier-controlled photochemical etching process in semiconductor device fabrication
An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device fabrication includes the steps of selective ion implanting, photochemical dry etching, and thermal annealing, in that order. In the selective ion implanting step, regions of the semiconductor material in a desired pattern are damaged and the remainder of the regions of the material not implanted are left undamaged. The rate of recombination of electrons and holes is increased in the damaged regions of the pattern compared to undamaged regions. In the photochemical dry etching step which follows ion implanting step, the material in the undamaged regions of the semiconductor are removed substantially faster than in the damaged regions representing the pattern, leaving the ion-implanted, damaged regions as raised surface structures on the semiconductor material. After completion of photochemical dry etching step, the thermal annealing step is used to restore the electrical conductivity of the damaged regions of the semiconductor material.
- Research Organization:
- AT and T Technologies, Inc., Greensboro, NC (USA)
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- Dept. of Energy
- Patent Number(s):
- PATENTS-US-A7207487
- Application Number:
- ON: DE89010799
- OSTI ID:
- 6292557
- Resource Relation:
- Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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