Effect of melt composition on the electrical properties and structure of undoped gallium arsenide single crystals

Journal Article · Fri Jul 01 00:00:00 EDT 1988 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:6291604

Koval'chuk, I A; Markov, A V; Mil'vidskii, M G

We present results on the electrical properties and structure of single crystal GaAs, 40 mm in diameter, obtained by a combined synthesis process and grown by the Czochralski method in an inert gas at high pressure. For crystals of each group the composition of the starting melt was varied during growing between 46-54 at. % As. The intrinsic resistivity of the material was obtained by measuring the Hall effect at room temperature.

• OSTI ID: 6291604
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Vol. 24:2; Other Information: Translated from Izv. Akad. Nauk SSSR, Neorg. Mater.; 24: No. 2, 324-326(Feb 1988)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRUCIBLES
COMPARATIVE EVALUATIONS
GALLIUM ARSENIDES
ELECTRICAL PROPERTIES
CHEMICAL COMPOSITION
CRYSTAL GROWTH
CZOCHRALSKI METHOD
DISLOCATIONS
ELECTRIC CONDUCTIVITY
ETCHING
HALL EFFECT
MONOCRYSTALS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
POINT DEFECTS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CRYSTALS
GALLIUM COMPOUNDS
LINE DEFECTS
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR MATERIALS
SURFACE FINISHING
360603* - Materials- Properties
360602 - Other Materials- Structure & Phase Studies