Plasma deposition of wide gap, highly photoconductive a-Si:H thin films from disilane-helium mixtures

Conference · Sun Jan 01 00:00:00 EST 1984

OSTI ID:6276374

Rajeswaran, G; Vanier, P E; Corderman, R R; Kampas, F J

Wide gap (>1.9 eV), photoconductive, intrinsic amorphous silicon films were made in a uhv system from Si/sub 2/H/sub 6/-He mixtures. The hydrogen concentrations, optical gaps and photoconductivities were measured. Unlike films made from SiH/sub 4/, Si/sub 2/H/sub 6/-produced films exhibit excellent electronic properties even at low deposition temperatures. The ratio of AM1 photoconductivity to dark conductivity was as high as 10/sup 7/.

• Research Organization: Brookhaven National Lab., Upton, NY (USA)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 6276374
• Report Number(s): BNL-35559; CONF-841157-35; ON: DE85004058
• Resource Relation: Conference: Symposium on the scientific basis for nuclear waste management, Boston, MA, USA, 26 Nov 1984
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILANES
DEPOSITION
PHOTOCONDUCTIVITY
AMORPHOUS STATE
ENERGY GAP
HELIUM
PLASMA
SILICON
THIN FILMS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
FLUIDS
GASES
HYDRIDES
HYDROGEN COMPOUNDS
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHYSICAL PROPERTIES
RARE GASES
SEMIMETALS
SILICON COMPOUNDS
360600* - Other Materials