Radiation-hard static induction transistor

Conference · Thu Dec 01 00:00:00 EST 1988 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:6268290

Hanes, M H; Bartko, J; Hwang, J M; Rai-Choudhury, P; Leslie, S G

The static induction transistor (SIT) has been proposed as a preferred power switching device for applications in military and space environments because of its potential for radiation hardness, high-frequency operation, and the incorporation of on-chip smart power sensor and logic functions. Design, fabrication, and characteristics of a 350 V, 100 A buried gate SIT are described. The potential radiation hardness of this class of devices was evaluated by measurement of SIT characteristics after irradiation with 100 Mrad electrons (2 MeV), and up to 10%16% fission neutrons/cm/sup 2/. High-temperature operation and the possibility of radiation damage self-annealing are discussed.

• Research Organization: Westinghouse Research and Development Center, Pittsburgh, PA (US); Powerex, Inc., Youngwood, PA (US)
• OSTI ID: 6268290
• Report Number(s): CONF-880730-; TRN: 89-012009
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. 35:6; Conference: 25. annual conference on nuclear and space radiation effects, Portland, OR, USA, 12 Jul 1988
• Country of Publication: United States
• Language: English

Related Subjects

73 NUCLEAR PHYSICS AND RADIATION PHYSICS
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
TRANSISTORS
RADIATION HARDENING
ANNEALING
DESIGN
ELECTRON TRANSFER
EVALUATION
FABRICATION
HIGH TEMPERATURE
IRRADIATION
NEUTRON TRANSPORT
HARDENING
HEAT TREATMENTS
NEUTRAL-PARTICLE TRANSPORT
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
654001* - Radiation & Shielding Physics- Radiation Physics
Shielding Calculations & Experiments
440200 - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
654003 - Radiation & Shielding Physics- Neutron Interactions with Matter