Phase separation in InGaN/GaN multiple quantum wells

Journal Article · Wed Apr 01 00:00:00 EST 1998 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.121166· OSTI ID:624844

McCluskey, M D; Romano, L T; Krusor, B S; Bour, D P; Johnson, N M ^[1]; Brennan, S ^[2]

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1. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California94304 (United States)
2. Stanford Synchrotron Radiation Laboratory, Menlo Park, California94309 (United States)

Evidence is presented for phase separation in In{sub 0.27}Ga{sub 0.73}N/GaN multiple quantum wells. After annealing for 40 h at a temperature of 950{degree}C, the absorption threshold at 2.95 eV is replaced by a broad peak at 2.65 eV. This peak is attributed to the formation of In-rich InGaN phases in the active region. X-ray diffraction measurements show a shift in the diffraction peaks toward GaN, consistent with the formation of an In-poor phase. A diffraction peak corresponding to an In-rich phase is also present in the annealed material. Nanoscale In-rich InGaN precipitates are observed by transmission electron microscopy and energy dispersive x-ray chemical analysis. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 624844
• Journal Information: Applied Physics Letters, Vol. 72, Issue 14; Other Information: PBD: Apr 1998
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SEGREGATION
TRANSMISSION ELECTRON MICROSCOPY
VISIBLE SPECTRA
INDIUM NITRIDES
GALLIUM NITRIDES
HETEROJUNCTIONS
ANNEALING
PHASE STUDIES
ABSORPTION SPECTRA
X-RAY DIFFRACTION
PRECIPITATION
STRUCTURAL CHEMICAL ANALYSIS