A comparative study of heavily irradiated silicon and non irradiated SI LEC GaAs detectors
- I.N.F.N. Firenze (Italy). Dipt. di Energetica S. Stecco; and others
Silicon p{sup +}n junctions irradiated with neutron and proton fluences in the range 5 {times} 10{sup 11}--4 {times} 10{sup 15} cm{sup {minus}2} and non-irradiated Semi Insulating (SI) LEC GaAs Schottky barriers have been analyzed. In silicon the concentration N{sub t} of the main radiation-induced deep traps (Et {approx} 0.44--0.54 eV) is found to increase as N{sub t} {alpha} f achieving values up to 5 {times} 10{sup 15} cm{sup {minus}3} and a mobility saturation at 100 cm{sup 2}/Vs has been observed at the highest fluences. A quantitative comparison between heavily irradiated silicon and non-irradiated GaAs evidenced similar charge collection efficiencies, a quasi-intrinsic bulk and similar concentrations of deep defects. On this basis, a unique model, correlating the lattice disorder and the detector performance, is suggested.
- OSTI ID:
- 624190
- Report Number(s):
- CONF-971147-; ISSN 0018-9499; TRN: 98:006443
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 45, Issue 3Pt1; Conference: Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference, Albuquerque, NM (United States), 11-13 Nov 1997; Other Information: PBD: Jun 1998
- Country of Publication:
- United States
- Language:
- English
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