Toward a very low-power integrated charge preamplifier by using III-V field effect transistors

Journal Article · Mon Jun 01 00:00:00 EDT 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.685288· OSTI ID:624124

Geronimo, G de; Longoni, A ^[1]

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1. Politecnico di Milano (Italy). Dipt. di Elettronica e Informazione

The future high-energy physics experiments, based on the new high-luminosity accelerators, will require a new generation of front-end monolithic electronics characterized, in particular, by high speed and low-power dissipation. In this perspective, the performances of Si and GaAs field effect transistors (FETs) are compared here in conditions of low-power dissipation. The advantages of solutions based on GaAs FETs, in applications requiring fast shaping times, are presented and experimental results are reported. The criteria for the optimum choice of the input transistor dimension and of its bias point are discussed.

• Sponsoring Organization: Istituto Nazionale di Fisica Nucleare, Rome (Italy); Ministero dell`Universita` e della Ricerca Scientifica e Tecnologica (Italy)
• OSTI ID: 624124
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 45, Issue 3Pt4; Other Information: PBD: Jun 1998
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
RADIATION DETECTORS
FIELD EFFECT TRANSISTORS
PREAMPLIFIERS
SILICON
GALLIUM ARSENIDES
READOUT SYSTEMS
PERFORMANCE