Magnetron sputtered boron films and TI/B multilayer structures

Patent · Tue Apr 20 00:00:00 EDT 1993

OSTI ID:6238326

Makowiecki, D M; Jankowski, A F

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

• DOE Contract Number: W-7405-ENG-48
• Assignee: Univ. of California, Oakland, CA (United States)
• Patent Number(s): US 5203977; A
• Application Number: PPN: US 7-666971
• OSTI ID: 6238326
• Resource Relation: Patent File Date: 11 Mar 1991
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
DEPOSITION
TITANIUM
AMORPHOUS STATE
FABRICATION
HOT PRESSING
LAYERS
SPUTTERING
THIN FILMS
USES
ELEMENTS
FILMS
MATERIALS WORKING
METALS
PRESSING
SEMIMETALS
TRANSITION ELEMENTS
360601* - Other Materials- Preparation & Manufacture