Structure and electrical properties of metal contacts on GaAs
This paper reports a study of the changes in the structural and chemical properties of Au and Al contacts on GaAs at annealing temperatures where significant changes in the Schottky barrier height are found. The annealing of Au contacts above 290 /sup 0/C caused the Schottky barrier height to decrease. In contrast the Schottky barrier height of Al diodes increases upon annealing. An increase in As/Ga ratio in the GaAs under the as-deposited metal was consistently found in both cases. Upon annealing the As/Ga ratio is found to decrease for Al contacts, while it is found to increase for Au contacts. The orientation relationship of the Au contacts changed upon annealing. This was not observed with the annealed Al. The orientation relationship depended strongly on the surface preparation before the metal deposition and on the annealing environment. It was proposed that the presence of As at the interface can determine the orientation relationship between metals and GaAs.
- Research Organization:
- Materials and Molecular Research Division, Lawrence Berkeley Laboratory and University of California, Berkeley, California 94720
- OSTI ID:
- 6230512
- Journal Information:
- J. Vac. Sci. Technol., B; (United States), Vol. 5:4
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM ARSENIDES
ELECTRIC CONTACTS
ELECTRICAL PROPERTIES
INTERFACES
GALLIUM ARSENIDES
GOLD
ANNEALING
SCHOTTKY BARRIER DIODES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
GALLIUM COMPOUNDS
HEAT TREATMENTS
METALS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TRANSITION ELEMENTS
360104* - Metals & Alloys- Physical Properties
360603 - Materials- Properties