A novel EPROM device fabricated using focused boron ion-beam implantation

Journal Article · Mon Jun 01 00:00:00 EDT 1987 · IEEE Trans. Electron Devices; (United States)

DOI:https://doi.org/10.1109/T-ED.1987.23080· OSTI ID:6224669

Shukuri, S; Wada, Y; Hagiwara, T; Komori, K; Tamura, M

A novel floating-gate avalanche injection (FAMOS) type erasable programmable read-only memory (EPROM) device is demonstrated, with a heavily focused ion-beam (FIB) implanted region of about 0.2-..mu..m width at the drain edge of the channel. This heavily B/sup +/-doped region permits a higher electric field near the drain edge, resulting in a remarkable increase of the hot-carrier generation rate, and reduces both the programming voltage and programming time. A three-dimensional device simulator, CADDETH, predicted that the electric field at the drain edge would increase by about six times, which would lead to hot-carrier generation efficiency three orders of magnitude higher.

• Research Organization: Research Lab., Hitachi, Ltd., Kokubunji, Tokyo 185
• OSTI ID: 6224669
• Journal Information: IEEE Trans. Electron Devices; (United States), Vol. ED-34:6
• Country of Publication: United States
• Language: English

Related Subjects

99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
MEMORY DEVICES
C CODES
COMPUTERIZED SIMULATION
FABRICATION
BORON
CRYSTAL DOPING
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ENERGY EFFICIENCY
FOCUSING
ION BEAMS
ION IMPLANTATION
PROGRAMMING
THREE-DIMENSIONAL CALCULATIONS
BEAMS
COMPUTER CODES
EFFICIENCY
ELEMENTS
SEMIMETALS
SIMULATION
990220* - Computers
Computerized Models
& Computer Programs- (1987-1989)