High-efficiency TEM/sub 00/ continuous-wave (Al,Ga)As epitaxial surface-emitting lasers and effect of half-wave periodic gain
We report room-temperature, continuous-wave (cw), photopumped operation of (Al,Ga)As surface-emitting lasers grown by molecular beam epitaxy. These monolithic semiconductor lasers comprise two multilayer semiconductor mirrors surrounding a layered active region. In the active region, GaAs quantum wells are spaced with half-wave periodicity to center on standing-wave maxima of the cavity optical field. By comparing threshold data for different lasers grown with and without half-wave periodicity, we observe the first experimental evidence for reduced cw lasing threshold (as low as 2 x 10/sup 4/ W/cm/sup 2/ ) with periodic gain in an epitaxial surface-emitting laser. Up to 50 mW with high efficiency (35% total, 80% differential) and narrow spectral linewidth (2 A) have been measured. A very high quality beam with low divergence (2.5/sup 0/) and circular TEM/sub 00/ profile has been observed. All of these observations represent significant advances for surface-emitting laser technology.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185
- OSTI ID:
- 6224549
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 54:13
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SEMICONDUCTOR LASERS
OPERATION
ALUMINIUM ARSENIDES
EFFICIENCY
EXPERIMENTAL DATA
FABRICATION
GAIN
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PERFORMANCE
POWER
STIMULATED EMISSION
THRESHOLD ENERGY
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
DATA
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
EPITAXY
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)