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Title: New current injection 1. 5-. mu. m wavelength Ga/sub x/Al/sub y/In/sub 1-x/-yAs/InP double-heterostructure laser grown by molecular beam epitaxy

Abstract

We have prepared and characterized for the first time a new current injection double-heterostructure (DH) laser with Ga/sub x/Al/sub y/In/sub 1-x/-y As as the active layer and InP as the cladding layers operating at 1.5-..mu..m wavelength. In this new heterostructure, there is only one group V element involved in every layer. This eases the precise control of lattice matching during molecular beam epitaxial (MBE) growth. At the same time, it eliminates the use of Al/sub 0.48/In/sub 0.52/ As, which is of lower quality than InP when grown by MBE, as the cladding layers. Broad-area Fabry--Perot diodes of 380 x 200 ..mu..m have a threshold current density of approx.3.2 kA/cm/sup 2/ for active layer thickness of 0.25 ..mu..m. In the temperature range approx.15--50 /sup 0/C, the threshold temperature dependence coefficient T/sub 0/ is typically approx.40 K. Above approx.50 /sup 0/C, T/sub 0/ decreases to approx.25--35 K. The present laser also represents the first current injection DH laser emitting at 1.5 ..mu..m ever prepared by MBE. In the present experiment, As/sub 2/ instead of As/sub 4/ was also used for the first time in growing the Ga/sub x/Al/sub y/In/sub 1-x/-y As layers by MBE in order to improve their quality. This becomesmore » particularly important as the substrate growth temperatures employed are relatively low, < or approx. =625 /sup 0/C.« less

Authors:
;
Publication Date:
Research Org.:
Bell Laboratories, Murray Hill, New Jersey 07974
OSTI Identifier:
6224168
Resource Type:
Journal Article
Journal Name:
Appl. Phys. Lett.; (United States)
Additional Journal Information:
Journal Volume: 42:11
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; INFRARED RADIATION; ALUMINIUM ARSENIDES; CRYSTAL GROWTH; CRYSTAL LATTICES; CURRENT DENSITY; ELECTRICAL PROPERTIES; EPITAXY; EXPERIMENTAL DATA; FABRY-PEROT INTERFEROMETER; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; MOLECULAR BEAMS; OPTICAL PROPERTIES; ORIENTATION; TEMPERATURE DEPENDENCE; THRESHOLD CURRENT; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL STRUCTURE; CURRENTS; DATA; ELECTRIC CURRENTS; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INFORMATION; INTERFEROMETERS; JUNCTIONS; LASERS; MEASURING INSTRUMENTS; NUMERICAL DATA; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; 420300* - Engineering- Lasers- (-1989)

Citation Formats

Tsang, W T, and Olsson, N A. New current injection 1. 5-. mu. m wavelength Ga/sub x/Al/sub y/In/sub 1-x/-yAs/InP double-heterostructure laser grown by molecular beam epitaxy. United States: N. p., 1983. Web. doi:10.1063/1.93801.
Tsang, W T, & Olsson, N A. New current injection 1. 5-. mu. m wavelength Ga/sub x/Al/sub y/In/sub 1-x/-yAs/InP double-heterostructure laser grown by molecular beam epitaxy. United States. https://doi.org/10.1063/1.93801
Tsang, W T, and Olsson, N A. 1983. "New current injection 1. 5-. mu. m wavelength Ga/sub x/Al/sub y/In/sub 1-x/-yAs/InP double-heterostructure laser grown by molecular beam epitaxy". United States. https://doi.org/10.1063/1.93801.
@article{osti_6224168,
title = {New current injection 1. 5-. mu. m wavelength Ga/sub x/Al/sub y/In/sub 1-x/-yAs/InP double-heterostructure laser grown by molecular beam epitaxy},
author = {Tsang, W T and Olsson, N A},
abstractNote = {We have prepared and characterized for the first time a new current injection double-heterostructure (DH) laser with Ga/sub x/Al/sub y/In/sub 1-x/-y As as the active layer and InP as the cladding layers operating at 1.5-..mu..m wavelength. In this new heterostructure, there is only one group V element involved in every layer. This eases the precise control of lattice matching during molecular beam epitaxial (MBE) growth. At the same time, it eliminates the use of Al/sub 0.48/In/sub 0.52/ As, which is of lower quality than InP when grown by MBE, as the cladding layers. Broad-area Fabry--Perot diodes of 380 x 200 ..mu..m have a threshold current density of approx.3.2 kA/cm/sup 2/ for active layer thickness of 0.25 ..mu..m. In the temperature range approx.15--50 /sup 0/C, the threshold temperature dependence coefficient T/sub 0/ is typically approx.40 K. Above approx.50 /sup 0/C, T/sub 0/ decreases to approx.25--35 K. The present laser also represents the first current injection DH laser emitting at 1.5 ..mu..m ever prepared by MBE. In the present experiment, As/sub 2/ instead of As/sub 4/ was also used for the first time in growing the Ga/sub x/Al/sub y/In/sub 1-x/-y As layers by MBE in order to improve their quality. This becomes particularly important as the substrate growth temperatures employed are relatively low, < or approx. =625 /sup 0/C.},
doi = {10.1063/1.93801},
url = {https://www.osti.gov/biblio/6224168}, journal = {Appl. Phys. Lett.; (United States)},
number = ,
volume = 42:11,
place = {United States},
year = {Wed Jun 01 00:00:00 EDT 1983},
month = {Wed Jun 01 00:00:00 EDT 1983}
}