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Title: Modifications in the phase transition properties of predeposited VO/sub 2/ films

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.572462· OSTI ID:6223979

Thin films of the phase transition material vanadium dioxide (VO/sub 2/) were deposited by thermal oxidation of e-beam evaporated vanadium on a variety of bulk materials. Substrate effects on transition temperature are confirmed as being due to a mismatch between film and substrate thermal expansion coefficients. Decreasing tensile stress results in a lowering of VO/sub 2/ transition temperature. Effects of low-energy Ar/sup +/ bombardment on the electrical and optical properties of these predeposited VO/sub 2/ films were investigated. Bombardment energies in the range 138--500 eV at 1.0--1.3 mA/cm/sup 2/ for 120--180 s were provided by a Commonwealth Millatron. The higher Ar/sup +/ energies resulted in collapse of the VO/sub 2/ optical transmittance hysteresis loop, while low-energy Ar/sup +/ ions caused both a downward shift in the transition temperature and a decrease in hysteresis loop width, suggesting a dependence of these quantities on intrinsic stress. In addition, large decreases in cold-state resistivity are reported and attributed to a reduction of the surface oxide by the low energy argon beam.

Research Organization:
LTV Aerospace and Defense Company, Vought Missiles and Advanced Programs Division, Research Department, Dallas, Texas 75265
OSTI ID:
6223979
Journal Information:
J. Vac. Sci. Technol., A; (United States), Vol. 2:4
Country of Publication:
United States
Language:
English