Calculation of temperatures in microwave-heated two-dimensional ceramic bodies

Journal Article · Sun Aug 01 00:00:00 EDT 1993 · Journal of the American Ceramic Society; (United States)

DOI:https://doi.org/10.1111/j.1151-2916.1993.tb08312.x· OSTI ID:6221580

Evans, J W ^[1]

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1. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering Lawrence Berkeley Lab., CA (United States)

Temperatures are calculated in a ceramic material exposed to microwaves. The method entails calculation of electromagnetic fields by integral formulation and subsequent solution of the heat conduction equation for temperatures in a ceramic piece. The solution of the equations is numerical and the parameters used are estimates for properties of SiC. The results include a case where the complex dielectric constant is varied with temperature. The computed results demonstrate that SiC can be heated to high temperatures (1,000-1,500 K) and that both the temperature and the temperature gradient can be controlled by varying the power density of the microwaves and the external cooling. The results also exhibit high sensitivity of temperatures to the dimensions of the material and the orientation in which microwaves impinge on the ceramic body.

• OSTI ID: 6221580
• Journal Information: Journal of the American Ceramic Society; (United States), Vol. 76:8; ISSN 0002-7820
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON CARBIDES
MICROWAVE HEATING
TEMPERATURE GRADIENTS
CALCULATION METHODS
CERAMICS
COOLING
DIELECTRIC PROPERTIES
ELECTROMAGNETIC FIELDS
MICROWAVE RADIATION
POWER DENSITY
TEMPERATURE MEASUREMENT
TEMPERATURE RANGE 1000-4000 K
THERMAL CONDUCTIVITY
CARBIDES
CARBON COMPOUNDS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
HEATING
PHYSICAL PROPERTIES
RADIATIONS
SILICON COMPOUNDS
TEMPERATURE RANGE
THERMODYNAMIC PROPERTIES
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication