The design of radiation-hardened ICs for space
The approaches to designing radiation-hardened integrated circuits for space applications are reviewed in this paper. Several technologies are covered, including bulk and epi CMOS, CMOS/SOL-SOS, CML,ECL, analog bipolar (JI, single-poly DI, and SOI) and GaAsE/D Heterojunction MESFET. Sections of the paper cover the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D converters, and the computer simulation of radiation effects on microelectronic ICs.
- Research Organization:
- Dept. of Electrical Engineering, Vanderbilt Univ., Nashville, TN (US); Sandia National Labs., Albuquerque, NM (US)
- OSTI ID:
- 6220231
- Journal Information:
- Proc. IEEE; (United States), Vol. 76:11
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PHYSICAL RADIATION EFFECTS
MICROELECTRONIC CIRCUITS
RADIATION HARDENING
SILICON OXIDES
SPACE VEHICLE COMPONENTS
AMPLIFIERS
ANALOG-TO-DIGITAL CONVERTERS
COMPUTERIZED SIMULATION
DESIGN
ELECTRICAL INSULATORS
HETEROJUNCTIONS
MOS TRANSISTORS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
GALLIUM COMPOUNDS
HARDENING
JUNCTIONS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SILICON COMPOUNDS
SIMULATION
TRANSISTORS
654001* - Radiation & Shielding Physics- Radiation Physics
Shielding Calculations & Experiments
440200 - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
360605 - Materials- Radiation Effects