Characterization of P{sup +} implanted SiO{sub 2} powders
- Ion Engineering Research Institute, Osaka (Japan)
- Kyoto Univ. (Japan); and others
{sup 31}P ions were implanted into high-purity SiO{sub 2} sphere powders of 20-30{mu}m{phi} at 50keV energy with 1.5{times}10{sup 17}/cm{sup 2} dose utilizing a modified medium-current implanter and, for reference, into SiO{sub 2} plate at 200keV with 1.0{times}10{sup 18}/cm{sup 2} utilizing a conventional medium-current implanter. P doping profile was measured by 3D-SIMS with 0.5{mu}m{phi} Cs{sup +} primary beam. Buried high P-concentration region was revealed. Implanted structure was observed by XTEM, EPMA and {mu}-RHEED: tens-nm-diameter sphere-like balls of phospho-silicate glass were distributed around the projected range. The top surface was almost unchanged from the substrate and was so thick as to prevent P elusion into hot water.
- OSTI ID:
- 621340
- Report Number(s):
- CONF-9606110-; TRN: 98:002114-0083
- Resource Relation:
- Conference: 11. international conference on ion implantation technology, Austin, TX (United States), 17-21 Jun 1996; Other Information: PBD: 1996; Related Information: Is Part Of Ion implantation technology - 96; Ishida, E.; Banerjee, S.; Mehta, S. [eds.] [and others]; PB: 859 p.
- Country of Publication:
- United States
- Language:
- English
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