A comparison of boron and phosphorus diffusion and dislocation loop growth from silicon implants into silicon

Conference · Tue Dec 31 00:00:00 EST 1996

OSTI ID:621297

Xu, Jingwei ^[1]; Law, M E ^[2]

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1. Texas Instruments, Inc., Dallas, TX (United States)
2. Univ. of Florida, Gainesville, FL (United States)

Transient Enhanced Diffusion (TED) results from implantation damage creating enhanced diffusion of dopants in silicon. This phenomena has mostly been studied using boron marker layers. We have performed an experiment using boron, phosphorus, and dislocation markers to compare TED effects. This experiment shows that phosphorus is enhanced significantly more than boron during damage annealing. Dislocation growth indicates that a number of interstitials greater than the damage dose is captured during these anneals. The time to saturate the dislocation growth agrees well with phosphorus diffusion saturation, and is greater than the boron saturation.

• OSTI ID: 621297
• Report Number(s): CONF-9606110-; TRN: 98:002114-0040
• Resource Relation: Conference: 11. international conference on ion implantation technology, Austin, TX (United States), 17-21 Jun 1996; Other Information: PBD: 1996; Related Information: Is Part Of Ion implantation technology - 96; Ishida, E.; Banerjee, S.; Mehta, S. [eds.] [and others]; PB: 859 p.
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON IONS
DIFFUSION
ION IMPLANTATION
CRYSTAL DEFECTS
SILICON
ANNEALING
INTERSTITIALS
PHOSPHORUS