Low pressure metalorganic vapor phase epitaxy of InP in a vertical reactor

Journal Article · Wed May 01 00:00:00 EDT 1985 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2114063· OSTI ID:6197620

Oishi, M; Kuroiwa, K

InP growth characteristics in low pressure metalorganic vapor phase epitaxy (MOVPE) in a vertical reactor were studied. A maximum mobility of 32,000 cmS/V s at 77 K was obtained. Selective epitaxy was also investigated, and completely selective epitaxy was realized for 15 m wide SiO2 masks at 40 torr. Preliminary results are shown for a hybrid LPE/MOVPE-grown distributed-feedback laser diode. Single longitudinal mode operation under pulsed current injection was achieved at room temperature.

• OSTI ID: 6197620
• Journal Information: J. Electrochem. Soc.; (United States), Vol. 132:5
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM PHOSPHIDES
CRYSTAL GROWTH METHODS
EPITAXY
SEMICONDUCTOR DIODES
FABRICATION
SILICON OXIDES
CHEMICAL REACTORS
FEEDBACK
MODE SELECTION
PULSES
SEMICONDUCTOR LASERS
CHALCOGENIDES
INDIUM COMPOUNDS
LASERS
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
360601* - Other Materials- Preparation & Manufacture