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Title: Radiation effects on power integrated circuits

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6177053

A study was initiated to investigate the effects of gamma (total ionizing dose), prompt gamma (gamma dot), and neutron radiation on commercially available power integrated circuits (PIC's). A Dielectric Isolated (DI) Bipolar-CMOS-DMOS (BCDMOS) technology developed at AT and T Bell Laboratories was selected for this characterization. Total ionizing dose testing resulted in device failure at 30 krads (Si). Gamma dot testing (30 ns pulsewidth) resulted in device failure due to transient upset of the CMOS logic at 1.0 E+09 rads(Si)/s. Neutron testing resulted in severe degradation in performance, but devices remained functional after receiving a fluence of 2.0 E+14 n/cm/sup 2/. Also, an attempt was made to harden the BCDMOS technology to gamma radiation. Devices from eight processing splits were characterized to determine if specific process changes would improve their performance.

Research Organization:
AT and T Bell Labs., Reading, PA (US); Naval Weapons Support Center (US)
OSTI ID:
6177053
Report Number(s):
CONF-880730-; TRN: 89-011576
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Vol. 35:6; Conference: 25. annual conference on nuclear and space radiation effects, Portland, OR, USA, 12 Jul 1988
Country of Publication:
United States
Language:
English