Asymmetric lambda/4-shifted InGaAsP/InP DFB lasers

Journal Article · Mon Jun 01 00:00:00 EDT 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073411· OSTI ID:6154347

Usami, M; Akiba, S; Utaka, K

1.5 ..mu..m asymmetric lambda/4-shifted InGaAsP/InP DFB lasers, in which the lambda/4-shift position was moved from the center of the DFB region toward the front side, were made in order to obtain higher output power with high single-longitudinal-mode (SLM) yield. Statistical measurements revealed that it was effective for the increase of the differential quantum efficiency from the front facet without a remarkable decrease of the SLM yield to move the lambda/4-shift position to the front facet by 10-15 percent of the total DFB length. The output efficiencies of the diodes with AR coatings on the window structure were almost coincident to those expected from theoretical calculations.

• Research Organization: KDD Research and Development Labs., Meguro-ku, Tokyo 153
• OSTI ID: 6154347
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. QE-23:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
DESIGN
PERFORMANCE
ANTIREFLECTION COATINGS
ASYMMETRY
CALCULATION METHODS
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
POWER GENERATION
QUANTUM EFFICIENCY
SEMICONDUCTOR DIODES
STATISTICS
WAVELENGTHS
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
EFFICIENCY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
MATHEMATICS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)