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Title: Influence of structure defects upon the luminescence and thermostimulated effects in Gd/sub 3/Ga/sub 5/O/sub 12/ crystals

Journal Article · · J. Appl. Spectrosc. (Engl. Transl.); (United States)
OSTI ID:6151110

The relationship between the 2.5-eV luminescence and the presence of intrinsic structure defects of gadolinium-gallium garnet (GGG) were studied and the role of the defects in capture and recombination processes of charge carriers were examined. The temperature dependence of the 2.5-eV luminescence yield was shown; the time dependence of the afterglow was studied in pulsed excitation by electrons. Results of research on the luminescence of GGG-V single crystals pointed to the recombination of the 2.5-eV emission band. The liberation of holes from traps during the heating excited GGG-V crystals, and their recombination with F centers lead to the appearance of thermostimulated luminescence.

OSTI ID:
6151110
Journal Information:
J. Appl. Spectrosc. (Engl. Transl.); (United States), Vol. 47:3; Other Information: Translated from Zhurn. Priklad. Spektrosk.; 47: No. 3, 417-421(Sep 1987)
Country of Publication:
United States
Language:
English

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