skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electron spin resonance study of the state of the surface A/sup III/-B/sup V/ compounds (A-In)

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:6096153

The authors studied the real surfaces of the semiconductors InSb, InAs, and InP. They took the ESR spectra on a Rubin radio spectrometer at 77 and 298 K. The experiment comprised two series of runs. In the first series the samples were subjected only to vacuum heat treatment while in the second series the previously vacuum-heat-treated samples were held in gaseous media (H/sub 2/, O/sub 2/, CO/sub 2/, H/sub 2/ + CO/sub 2/, H/sub 2/O) at a pressure of 133 PA and at the temperatures of the strongest chemical adsorption for 1 h. They used Mn/sup 2 +/ as the standard for determining the g-factor. The value of the g-factor, the concentration of the paramagnetic centers, and the shape of the signal were evaluated. The similarity of the ESR spectra of the semiconductors InB/sup V/ indicates that the paramagnetic centers are of the same nature and the difference in their intensities indicates that the concentration of the paramagnetic centers depends on the nature of the semiconductor and the state of its surface. This state is determined to a considerable degree by the different saturated vapor pressures of the components A and B and the depletion of the surface in the more volatile component B.

Research Organization:
Omsk Polytechnic Institute (USSR)
OSTI ID:
6096153
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Vol. 23:10; Other Information: Translated from Izv. Akad. Nauk SSSR, Neorg. Mater.; 23, No. 10, 1732-1734 (Oct 1987)
Country of Publication:
United States
Language:
English