Modeling of ionizing radiation effects in short-channel MOSFETs

Journal Article · Wed Dec 01 00:00:00 EST 1982 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1982.4336427· OSTI ID:6089099

Wilson, C L; Blue, J L

The effect of ionizing radiation on short-channel MOSFETs is modeled using a charge-sheet approach. The primary effect of ionizing radiation is the introduction of oxide trapped charge (OTC) and interface trapped charge (ITC). Using a two-dimensional charge-sheet model, transistors with channel lengths between 4.65 ..mu..m and 0.27 ..mu..m were studied. A range of net OTC and ITC values of + 4.0 X 10/sup 11/ cm/sup -2/ corresponding to a dose of approximately 10/sup 6/ rad (SiO/sub 2/) was used to study total dose effects. ITC and OTC cause significant effects in each region of operation. In the subthreshold region, the sensitivity of drain current to these charges is exponential. A more realistic model must include the energy distribution of the ITC charge as well as two-dimensional charge sharing effects. In the triode region, the effects of ITC and OTC are indistinguishable from two-dimensional charge sharing effects.

• Research Organization: Semiconductor Devices and Circuits Div., NBS, Washington, DC 20234
• OSTI ID: 6089099
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. 29:6
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
MOSFET
RADIATION EFFECTS
CHARGE CARRIERS
DOSES
ENERGY SPECTRA
FUNCTIONAL MODELS
IONIZING RADIATIONS
OPERATION
THRESHOLD DOSE
TRANSISTORS
TRAPPING
MOS TRANSISTORS
RADIATION DOSES
RADIATIONS
SEMICONDUCTOR DEVICES
SPECTRA
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems