Effect of diborane profile on the photovoltaic performance of A-Si:H solar cells prepared by glow discharge of disilane

Conference · Tue May 01 00:00:00 EDT 1984 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:6070978

Konagai, M; Komori, K; Matsushita, T; Sichanugrist, P; Takahashi, K

Extra high speed preparation of Al/nip/SnO/sub 2// ITO/Glass solar cells from disilane is presented. The effect of graded boron-doping during the i-layer deposition has been investigated on the performance of amorphous Si:H solar cells. It is found that the characteristics of cells strongly depend on the graded doping profile of diborane and the high efficiency of 8.05 % (AMl, 0.25 cm/sup 2/) was obtained with the linear graded doping profile at the deposition rate of 17 A/s. Moreover, in order to confirm the graded boron-doping effect, the theoretical analysis was carried out.

• Research Organization: Tokyo Institute of Technology, Ohokayama, Meguro-ku, Tokyo
• OSTI ID: 6070978
• Report Number(s): CONF-840561-
• Journal Information: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Conference: 17. IEEE photovoltaic specialists conference, Orlando, FL, USA, 1 May 1984
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
CRYSTAL DOPING
DEPLETION LAYER
PERFORMANCE
ALUMINIUM
AMORPHOUS STATE
BORANES
BORON
DEPOSITION
EFFICIENCY
FABRICATION
GLASS
GLOW DISCHARGES
GRADED BAND GAPS
P-N JUNCTIONS
SILANES
TIN OXIDES
BORON COMPOUNDS
CHALCOGENIDES
DIRECT ENERGY CONVERTERS
ELECTRIC DISCHARGES
ELEMENTS
EQUIPMENT
HYDRIDES
HYDROGEN COMPOUNDS
JUNCTIONS
LAYERS
METALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
TIN COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion