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Title: Carrier concentration and mobility in two-phase eutectic A/sup III/B/sup V/-Ge(Si) alloys

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:6054660

The authors proposes a technique of determining the carrier concentration and mobility in the separate phases of two-phase alloys in which oriented rod-like inclusions have carrier concentrations similar to the host material. The calculations are then used to determine the carrier concentration and mobility in each alloy phase, and to discuss the doping processes and mechanisms of impurity incorporation in two-phase semiconductors. He studied the Hall constant R in two-phase, oriented eutectic alloys of InSb-Ge, InAs-Ge, GaAs-Ge, and GaAs-Si. He established that R depends on the relative orientations of the current flow, magnetic field, and elongated inclusions. Furthermore, the particular impurity concentration in the alloy also has an effect on R.

Research Organization:
Krasnoyarsk State Univ. (USSR)
OSTI ID:
6054660
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Vol. 24:1; Other Information: Translated from Izv. Akad. Nauk SSSR, Neorg. Mater.; 24, No. 1, 19-23 (Jan 1988)
Country of Publication:
United States
Language:
English

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