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Title: Broadband long-wavelength operation (9700 A/approx gt//lambda//approx gt/8700 A) of Al/sub /ital y//Ga/sub 1/minus//ital y//As-GaAs-In/sub /ital x//Ga/sub 1/minus//ital x//As quantum well heterostructure lasers in an external grating cavity

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.101796· OSTI ID:6045232

Data are presented on /ital p/-/ital n/ Al/sub /ital y//Ga/sub 1/minus//ital y//As- GaAs-In/sub /ital x//Ga/sub 1/minus//ital x//As quantum well heterostructure lasers showing that the large band filling range of a combined GaAs-In/sub /ital x//Ga/sub 1/minus//ital x//As quantum well makes possible a very large tuning range in external grating operation. Continuous 300 K laser operation is demonstrated in the 8696--9711 A range (/Delta//lambda//similar to/1000 A, /Delta//h bar//omega//similar to/150 meV) and pulsed operation in the 8450--9756 A range (/Delta//lambda//similar to/1300 A, /Delta//h bar//omega//similar to/200 meV). The band filling and gain profile are shown to be continuous from the In/sub /ital x//Ga/sub 1/minus//ital x//As quantum well (/ital L//sub /ital z// /similar to/125 A, /ital x//similar to/0.2) up into the surrounding GaAs quantum well (/ital L//sub /ital z// /similar to/430 A).

Research Organization:
Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at UrbanaChampaign, Urbana, Illinois 61801 (US); Polaroid Corporation, Cambridge, Massachusetts 02139
OSTI ID:
6045232
Journal Information:
Appl. Phys. Lett.; (United States), Vol. 55:8
Country of Publication:
United States
Language:
English