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Title: Integration of detectors and optical-waveguide structures. Final report, 15 March 1985-15 March 1988

Technical Report ·
OSTI ID:6036794

Integrated detection of light propagating in an optical waveguide with a photodetector array fabricated directly on the waveguide surface was demonstrated. Devices having very good performance were formed by depositing polycrystalline silicon and laser recrystallizing it prior to device fabrication. The use of two lasers was shown to result in improved recrystallization. Analysis of a four-layer optical waveguide structure was performed and applied to multiple layer gallium-aluminum-arsenide structures and SiO/sub 2//Si structures. Numerical calculations of waveguide attenuation due to substrate coupling for thermally-nitrided silicon dioxide and for gallium aluminum arsenide waveguides were performed for a variety of layer thicknesses, layer-material compositions, and wavelengths. Comparison with some experimental data was carried out. Extensive Raman microprobe characterization was also performed on laser-recrystallized silicon and on GaAlAs dielectric strip waveguide structures. use of rapid thermal annealing to initiate in-diffusion of Ti into LiNb0/sub 3/ has yielded low-loss optical waveguides.

Research Organization:
Cincinnati Univ., OH (USA). Dept. of Electrical and Computer Engineering
OSTI ID:
6036794
Report Number(s):
AD-A-201331/6/XAB
Country of Publication:
United States
Language:
English