Spatial and temporal instabilities in multistripe semiconductor lasers

Journal Article · Tue Jan 01 00:00:00 EST 1985 · J. Opt. Soc. Am. B: Opt. Phys.; (United States)

DOI:https://doi.org/10.1364/JOSAB.2.000237· OSTI ID:6032338

Rozzi, T E; Shore, K A

We review techniques for the analysis of spatial and temporal instabilities in laser devices. The spatial problem and the temporal problem are first considered in isolation. We then proceed to study their interaction, which requires the development of a novel approach based on the Hopf bifurcation theory. This analysis highlights a number of controllable instabilities effects that can be exploited in optical switching and logic applications.

• Research Organization: School of Electrical Engineering, University of Bath, Claverton Down, Bath BA2 7AY, England
• OSTI ID: 6032338
• Journal Information: J. Opt. Soc. Am. B: Opt. Phys.; (United States), Vol. 2:1
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
INSTABILITY
COMMUNICATIONS
OPERATION
OPTICAL EQUIPMENT
EQUIPMENT
LASERS
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)