Processing development for ceramic structural components: the influence of a presentering of silicon on the final properties of reaction bonded silicon nitride. Final technical report
The influence of a presintering of silicon on the final properties of reaction bonded silicon nitride has been studied using scanning electron and optical microscopy, X-ray diffraction analysis, 4 pt. bend test, and mercury intrusion porosimetry. It has been shown that presintering at 1050/sup 0/C will not affect the final nitrided properties. At 1200/sup 0/C, the oxide layer is removed, promoting the formation of B-phase silicon nitride. Presintering at 1200/sup 0/C also results in compact weight loss due to the volatilization of silicon, and the formation of large pores which severely reduce nitrided strength. The development of the structure of sintered silicon compacts appears to involve a temperature gradient, with greater sintering observed near the surface.
- Research Organization:
- Washington Univ., Seattle (USA)
- DOE Contract Number:
- FG01-78ET12241
- OSTI ID:
- 6013596
- Report Number(s):
- DOE/ET/12241-T1; ON: DE85008055
- Resource Relation:
- Other Information: Portions are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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