Growth and impurity-trapping kinetics in sulfur-doped gallium arsenide epitaxy

Journal Article · Fri Jul 01 00:00:00 EDT 1988 · Sov. Phys. J. (Engl. Transl.); (United States)

DOI:https://doi.org/10.1007/BF00896689· OSTI ID:5978161

Vilisova, M D; Lavrent'eva, L G; Porokhovnichenko, L P; Chernov, N A

Measurements have been made on the effects of crystallization conditions on the growth rates and electrophysical parameters for sulfur-doped epitaxial gallium arsenide films: gas speed, supersaturation, and deposition temperature. There is a correlation between the impurity concentration and the growth rate. The results are discussed from a model that incorporates interaction between impurity atoms and matrix ones.

• Research Organization: Tomsk Univ. (USSR)
• OSTI ID: 5978161
• Journal Information: Sov. Phys. J. (Engl. Transl.); (United States), Vol. 31:1; Other Information: Translated from Izv. Vyssh. Uchebn. Zaved., Fiz.; 31: No. 1, 71-76(Jan 1987)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
CRYSTAL GROWTH
SULFUR
TRAPPING
CRYSTAL DOPING
CRYSTALLIZATION
DIFFUSION
DOPED MATERIALS
ELECTRICAL PROPERTIES
GAS FLOW
IMPURITIES
KINETICS
SULFUR FLUORIDES
TEMPERATURE DEPENDENCE
THIN FILMS
VAPOR PHASE EPITAXY
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
EPITAXY
FILMS
FLUID FLOW
FLUORIDES
FLUORINE COMPOUNDS
GALLIUM COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
MATERIALS
NONMETALS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PNICTIDES
SULFUR COMPOUNDS
360602* - Other Materials- Structure & Phase Studies
360603 - Materials- Properties