Influence of the charge state of recombination centers on the photosensitivity of semiconductors
The introduction of recombination centers with significantly different capture cross sections for the majority (S/sub n/) and minority (S/sub p/) charge carriers (W/sub p//S/sub n/ > 10/sup 4/) into photosensitive semiconductors such as CdSe, CdS, and some other compounds significantly increases the lifetime of the nonequilibrium electrons /tau//sub n/ in a number of cases. The authors made an attempt to precisely describe the variation of the lifetime of the majority current carriers in a semiconductor with enhanced photosensitivity. The results of the calculations show that the variation of the lifetime of the majority charge carriers in a sample with enhanced photosensitivity depends on the charge state of the centers which play the role of the rapid-recombination centers. When these centers are positively charged, /tau//sub n/ increases by /approx/2 orders of magnitude. If the electrons are captured in neutral levels, the lifetime /tau//sub n/ varies to a considerably greater degree. In both cases, an increase in the photoexcitation intensity results, as expected, in a decrease in /tau//sub n/ in a crystal with increased photosensitivity.
- Research Organization:
- I.I. Mechnikov Odessa State Univ. (USSR)
- OSTI ID:
- 5972599
- Journal Information:
- Inorg. Mater. (Engl. Transl.); (United States), Vol. 24:7; Other Information: Translated from Izv. Akad. Nauk. SSSR, Neorg. Mater.; 24: No. 7, 1208-1210 (Jul 1988)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CHARGE CARRIERS
RECOMBINATION
SEMICONDUCTOR MATERIALS
PHOTOSENSITIVITY
CAPTURE
CARRIER DENSITY
CARRIER LIFETIME
CHARGE COLLECTION
CHARGE STATE
ELECTRON DENSITY
ELECTRONS
EXCITATION
HOLES
MATHEMATICAL MODELS
PHOTOCONDUCTORS
ELEMENTARY PARTICLES
ENERGY-LEVEL TRANSITIONS
FERMIONS
LEPTONS
LIFETIME
MATERIALS
SENSITIVITY
360603* - Materials- Properties
360602 - Other Materials- Structure & Phase Studies