The sulfurized InP surface

Journal Article · Sat Jul 01 00:00:00 EDT 1989 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.584613· OSTI ID:5972427

Wilmsen, C W; Geib, K M; Shin, J; Iyer, R; Lile, D L; Pouch, J J

Sulfur treatments have previously been shown to improve the electrical characteristics of InP and GaAs devices. This paper reports the results of an Auger/x-ray photoelectron spectroscopy investigation of the InP surface after sulfur treatment. It is shown that the sulfur remains on the surface bonded to indium. There is no indication of elemental sulfur or sulfur bonded to phosphorus. This suggests that the sulfur has replaced phosphorus on the surface and has filled the phosphorus vacancies.

• Research Organization: NSF ERC for Optoelectronic Computing Systems and Department of Electrical Engineering Colorado State University, Fort Collins, Colorado 80523(US); NASA Lewis Research Center, Cleveland, Ohio 44135
• OSTI ID: 5972427
• Journal Information: J. Vac. Sci. Technol., B; (United States), Vol. 7:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM PHOSPHIDES
SURFACE TREATMENTS
AUGER ELECTRON SPECTROSCOPY
CHEMICAL BONDS
ELECTRONIC STRUCTURE
PHOTOELECTRON SPECTROSCOPY
SULFIDATION
CHEMICAL REACTIONS
ELECTRON SPECTROSCOPY
INDIUM COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SPECTROSCOPY
360604* - Materials- Corrosion
Erosion
& Degradation