Carrier Tunneling in High-Frequency Electric Fields

Journal Article · Sun Mar 01 00:00:00 EST 1998 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.80.2409· OSTI ID:597223

Ganichev, S D; Ziemann, E; Gleim, T; Prettl, W ^[1]; Ganichev, S D; Yassievich, I N; Perel, V I ^[2]; Wilke, I; Haller, E E ^[3]

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1. Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, 93040 Regensburg (Germany)
2. A.F. Ioffe Physicotechnical Institute, Russian Academy of the Sciences, St. Petersburg, 194021 (Russia)
3. Materials Sciences Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, California 94720 (United States)

An enhancement of tunnel ionization of deep impurities in semiconductors in an alternating field as compared to static fields has been observed. The transition between the quasistatic and the high-frequency regime is determined by the tunneling time. For the case of deep impurities this is the time of redistribution of the defect vibrational system which depends strongly on temperature and the impurity structure. A theory of tunnel ionization of deep impurities by high-frequency fields has been developed. {copyright} {ital 1998} {ital The American Physical Society}

• OSTI ID: 597223
• Journal Information: Physical Review Letters, Vol. 80, Issue 11; Other Information: PBD: Mar 1998
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
TUNNEL EFFECT
ELECTRIC FIELDS
GERMANIUM
GALLIUM ARSENIDES
ALUMINIUM ARSENIDES
GALLIUM ANTIMONIDES
TELLURIUM ADDITIONS
IMPURITIES
ELECTRON-PHONON COUPLING
ALTERNATING CURRENT
IONIZATION
SEMICONDUCTOR MATERIALS