Determination of the position of the. pi. -. nu. -junction in epitaxial structures of gallium arsenide doped with iron

Journal Article · Tue May 01 00:00:00 EDT 1984 · Sov. Phys. J. (Engl. Transl.); (United States)

OSTI ID:5955923

Chernov, N A; Asanov, O M; Bakin, N N; Vilisova, M D

An investigation of the distribution of the electrolyte-semiconductor capacitance barrier over the thickness of epitaxial layers of gallium arsenide doped with iron on a low-resistance substrate is described. It is shown that measurements of the barrier capacitance at low frequencies enables the position of the ..pi..-..nu..-junction, formed at the boundary of separation of the epitaxial layer and the substrate, to be accurately determined.

• OSTI ID: 5955923
• Journal Information: Sov. Phys. J. (Engl. Transl.); (United States), Vol. 26:11; Other Information: Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 89-93, November, 1983
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
DEPLETION LAYER
SEMICONDUCTOR JUNCTIONS
CAPACITANCE
DOPED MATERIALS
ELECTROLYTES
ELECTROMOTIVE FORCE
EPITAXY
IRON
N-TYPE CONDUCTORS
SEMICONDUCTOR MATERIALS
SUBSTRATES
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL PROPERTIES
ELEMENTS
GALLIUM COMPOUNDS
JUNCTIONS
LAYERS
MATERIALS
METALS
PHYSICAL PROPERTIES
PNICTIDES
TRANSITION ELEMENTS
360603* - Materials- Properties