Actively mode-locked semiconductor lasers

Journal Article · Thu Jun 01 00:00:00 EDT 1989 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.29278· OSTI ID:5940620

Bowers, J E; Morton, P A; Mar, A; Corzine, S W

Measurements of actively mode-locked semiconductor lasers are described and compared to calculations of the mode-locking process using three coupled traveling wave rate equations for the electron and photon densities. The dependence of pulse width on the modulation current and frequency are described. A limitation to minimum achievable pulse widths in mode-locked semiconductor lasers is shown to be dynamic detuning due to gain saturation. Techniques to achieve subpicosecond pulses are described, together with ways to reduce multiple pulse outputs. The amplitude and phase noise of linear and ring cavity semiconductor lasers were measured and found to be tens of dB smaller than YAG and argon lasers and limited by the noise from the microwave oscillator. High-frequency phase noise is only measurable in detuned cavities, and is below -110 dBc (1 Hz) in optimally tuned cavities. The prospects for novel ways to achieve even shorter pulses are discussed.

• Research Organization: California Univ., Santa Barbara, CA (USA). Dept. of Electrical Engineering
• OSTI ID: 5940620
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. 25:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
MODE LOCKING
ARGON
CALCULATION METHODS
ELECTRON DENSITY
EQUATIONS
GAIN
LASER CAVITIES
NOISE
PHOTONS
RING LASERS
TRAVELLING WAVES
AMPLIFICATION
ELEMENTARY PARTICLES
ELEMENTS
FLUIDS
GASES
LASERS
MASSLESS PARTICLES
NONMETALS
RARE GASES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
420300* - Engineering- Lasers- (-1989)