Surface analytical study of CuInSe[sub 2] treated in Cd-containing partial electrolyte solution

Conference · Mon Mar 01 00:00:00 EST 1999 · AIP Conference Proceedings

OSTI ID:5940358

Asher, S E; Ramanathan, K; Wiesner, H

Junction formation in CuInSe[sub 2] (CIS) has been studied by exposing thin films and single-crystal samples to solutions containing NH[sub 4]OH and CdSO[sub 4]. The treated samples were analyzed by secondary ion mass spectrometry to determine the amount and distribution of Cd deposited on the surface of the films. Cadmium is found to react with the surface for all the solution exposure times and temperatures studied. The reaction rapidly approaches the endpoint and remains relatively unchanged for subsequent solution exposure. Cadmium in-diffusion, as measured by secondary ion mass spectrometry, is obscured by topography effects in the thin-film samples and by ion-beam mixing and topography in the single-crystal sample. [copyright] [ital 1999 American Institute of Physics.]

• DOE Contract Number: AC36-83CH10093
• OSTI ID: 5940358
• Report Number(s): CONF-980935-; CODEN: APCPCS
• Journal Information: AIP Conference Proceedings, Vol. 462:1; Conference: 15. National Center for Photovoltaics program review conference, Denver, CO (United States), 9-11 Sep 1998; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM
COPPER COMPOUNDS
COPPER SELENIDES
DIFFUSION
INDIUM COMPOUNDS
INDIUM SELENIDES
ROUGHNESS
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SURFACE TREATMENTS
THIN FILMS
CHALCOGENIDES
ELEMENTS
FILMS
METALS
SELENIDES
SURFACE PROPERTIES
TRANSITION ELEMENT COMPOUNDS
360602* - Other Materials- Structure & Phase Studies