Experiments and modeling of the photocurrent response of GaAs MESFETs

Conference · Sat Dec 01 00:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:5933512

Howard, J W; Islam, N E; Block, R C; Becker, M ^[1]; Ishaque, A N ^[2]; Chang, J Y; Stauber, M ^[3]

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1. Rensselaer Polytechnic Inst., Troy, NY (USA). Dept. of Nuclear Engineering
2. Rensselaer Polytechnic Inst., Troy, NY (USA). Dept. of Electrical, Computer, and Systems Engineering
3. Grumman Corp., Bethpage, NY (USA). Corporate Research Center

One micron technology GaAs MESFETs have been exposed to a transient radiation environment at a linear accelerator laboratory and modeled by computer simulation using a modified version of the PISCES-IIB semiconductor device simulation code and the TRIGSPICE circuit simulation code. The MESFETs were tested in steady-state conditions, with short (20 ns) radiation pulses, and with short pulses on devices that had received a prior dose of gamma, neutron or neutron-plus-gamma irradiation. Parasitic bipolar action was observed in the short pulse testing in unexposed devices. Previously unreported transient failure was observed in the neutron pre-irradiated devices only. The threshold for this failure was consistent with the level of severity of prior irradiation. Steady-state photocurrent and the parasitic bipolar transistor are modeled and explained on the basis of physical mechanisms.

• OSTI ID: 5933512
• Report Number(s): CONF-900723-; CODEN: IETNA; TRN: 91-014920
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Vol. 37:6; Conference: 27. IEEE annual conference on nuclear and space radiation effects, Reno, NV (USA), 16-20 Jul 1990; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
42 ENGINEERING
99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
GALLIUM ARSENIDES
PHOTOCONDUCTIVITY
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR DEVICES
COMPUTER CODES
COMPUTERIZED SIMULATION
ELECTRICAL TRANSIENTS
GAMMA RADIATION
LINEAR ACCELERATORS
MATHEMATICAL MODELS
NEUTRONS
PULSES
RESPONSE FUNCTIONS
STEADY-STATE CONDITIONS
THRESHOLD ENERGY
TRANSISTORS
ACCELERATORS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
ENERGY
FERMIONS
FUNCTIONS
GALLIUM COMPOUNDS
HADRONS
IONIZING RADIATIONS
NUCLEONS
PHYSICAL PROPERTIES
PNICTIDES
RADIATION EFFECTS
RADIATIONS
SIMULATION
TRANSIENTS
VOLTAGE DROP
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)
990200 - Mathematics & Computers