Studies of a-Si:H growth mechanism, using deuterium, by rutherford recoil measurement
Conference
·
· Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:5902812
a-Si:H were grown from silane and disilane by RF glow discharge. Deuterium (D) was used as a tracer in this investigation, in which four gas mixtures (SiH/sub 4/+D/sub 2/, SiD/sub 4/+H/sub 2/, Si/sub 2/H/sub 6/+D/sub 2/, and Si/sub 2/D/sub 6/+H/sub 2/) were employed. a-Si:H so produced were analyzed for H and D by Rutherford recoil measurement to determine whether these elements came from silanes or the dilution gas. When the RF power is low, much larger proportion of hydrogen atoms in silanes than in the dilution gas is found in a-Si:H. On the other hand, at high RF power, an excessive amount of D from the dilution gas, D/sub 2/, appears in a-Si:H.
- Research Organization:
- Komatsu Electronic Metals Co., Ltd., Hiratsuka, Kanagawa
- OSTI ID:
- 5902812
- Report Number(s):
- CONF-840561-
- Journal Information:
- Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Conference: 17. IEEE photovoltaic specialists conference, Orlando, FL, USA, 1 May 1984
- Country of Publication:
- United States
- Language:
- English
Similar Records
High-deposition rate a-Si:H through VHF-CVD of argon-diluted silane
Mass spectrometric studies of impurities in silane and their effects on the electronic properties of hydrogenated amorphous silicon
Very wide-gap and device-quality a-Si:H from highly H{sub 2} diluted SiH{sub 4} plasma decomposed by high rf power
Conference
·
Tue Jul 01 00:00:00 EDT 1997
·
OSTI ID:5902812
+1 more
Mass spectrometric studies of impurities in silane and their effects on the electronic properties of hydrogenated amorphous silicon
Journal Article
·
Fri Jul 01 00:00:00 EDT 1983
· J. Appl. Phys.; (United States)
·
OSTI ID:5902812
Very wide-gap and device-quality a-Si:H from highly H{sub 2} diluted SiH{sub 4} plasma decomposed by high rf power
Conference
·
Thu Jul 01 00:00:00 EDT 1999
·
OSTI ID:5902812
+3 more
Related Subjects
14 SOLAR ENERGY
SILICON
CRYSTAL GROWTH METHODS
RUTHERFORD SCATTERING
DEUTERIDES
DEUTERIUM
GLOW DISCHARGES
HYDROGEN COMPOUNDS
MEASURING METHODS
RF SYSTEMS
SILANES
SILICON COMPOUNDS
SILICON SOLAR CELLS
DEUTERIUM COMPOUNDS
DIRECT ENERGY CONVERTERS
ELASTIC SCATTERING
ELECTRIC DISCHARGES
ELEMENTS
EQUIPMENT
HYDRIDES
HYDROGEN ISOTOPES
ISOTOPES
LIGHT NUCLEI
NUCLEI
ODD-ODD NUCLEI
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SCATTERING
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
STABLE ISOTOPES
140501* - Solar Energy Conversion- Photovoltaic Conversion
SILICON
CRYSTAL GROWTH METHODS
RUTHERFORD SCATTERING
DEUTERIDES
DEUTERIUM
GLOW DISCHARGES
HYDROGEN COMPOUNDS
MEASURING METHODS
RF SYSTEMS
SILANES
SILICON COMPOUNDS
SILICON SOLAR CELLS
DEUTERIUM COMPOUNDS
DIRECT ENERGY CONVERTERS
ELASTIC SCATTERING
ELECTRIC DISCHARGES
ELEMENTS
EQUIPMENT
HYDRIDES
HYDROGEN ISOTOPES
ISOTOPES
LIGHT NUCLEI
NUCLEI
ODD-ODD NUCLEI
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SCATTERING
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
STABLE ISOTOPES
140501* - Solar Energy Conversion- Photovoltaic Conversion