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Title: Studies of a-Si:H growth mechanism, using deuterium, by rutherford recoil measurement

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:5902812

a-Si:H were grown from silane and disilane by RF glow discharge. Deuterium (D) was used as a tracer in this investigation, in which four gas mixtures (SiH/sub 4/+D/sub 2/, SiD/sub 4/+H/sub 2/, Si/sub 2/H/sub 6/+D/sub 2/, and Si/sub 2/D/sub 6/+H/sub 2/) were employed. a-Si:H so produced were analyzed for H and D by Rutherford recoil measurement to determine whether these elements came from silanes or the dilution gas. When the RF power is low, much larger proportion of hydrogen atoms in silanes than in the dilution gas is found in a-Si:H. On the other hand, at high RF power, an excessive amount of D from the dilution gas, D/sub 2/, appears in a-Si:H.

Research Organization:
Komatsu Electronic Metals Co., Ltd., Hiratsuka, Kanagawa
OSTI ID:
5902812
Report Number(s):
CONF-840561-
Journal Information:
Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Conference: 17. IEEE photovoltaic specialists conference, Orlando, FL, USA, 1 May 1984
Country of Publication:
United States
Language:
English