Effect of the defectiveness of semiconductor on the characteristics of Pd-GaAs contacts
A study was made of the volt-ampere characteristics of Pd-GaAs Schottky barriers in relation to the defectiveness of the gallium arsenide. The defect content of the material was checked metallographically and by the method of x-ray topography. Single crystals of GaAs doped with Ge, Ge + Sb, and Ge + In were studied. Here, the electron concentration was (1-4) /times/ 10/sup 16/ cm/sup /minus/3/, and mean dislocation density ranged from 4 /times/ 10/sup 4/ to 2 /times/ 10/sup 2/ cm/sup /minus/2/. The defectiveness of the material was altered by the introduction of different concentrations of isovalent impurities. It was shown that for diodes produced by the same technology, the manifestation of low-temperature VAC anomalies and the current mechanism are determined by structural features of the semiconductor (by dislocations and microdefects).
- Research Organization:
- Tomsk Univ. (USSR)
- OSTI ID:
- 5888903
- Journal Information:
- Sov. Phys. J. (Engl. Transl.); (United States), Vol. 31:7; Other Information: Translated from Izvestiya Vysshikh Uchebynkh Zavedenij Fizika; 31: No. 7, 90-95 (Jul 1988)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
CRYSTAL DEFECTS
SCHOTTKY BARRIER DIODES
ELECTRIC CONDUCTIVITY
ANTIMONY
CRYSTAL DOPING
DISLOCATIONS
DOPED MATERIALS
ELECTRIC CURRENTS
ELECTRON DENSITY
GERMANIUM
IMPURITIES
INDIUM
MATERIALS TESTING
PALLADIUM
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
GALLIUM COMPOUNDS
LINE DEFECTS
MATERIALS
METALS
PHYSICAL PROPERTIES
PLATINUM METALS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TESTING
TRANSITION ELEMENTS
360602* - Other Materials- Structure & Phase Studies
360603 - Materials- Properties