A temperature dependent SPICE macro-model for power MOSFETs

Conference · Tue Jan 01 00:00:00 EST 1991

DOI:https://doi.org/10.1109/MWSCAS.1991.252091· OSTI ID:5884559

Pierce, D G

The power MOSFET SPICE Macro-Model has been developed suitable for use over the temperature range {minus}55 to 125 {degrees}C. The model is comprised of a single parameter set with temperature dependence accessed through the SPICE .TEMP card. SPICE parameter extraction techniques for the model and model predictive accuracy are discussed. 7 refs., 8 figs., 1 tab.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5884559
• Report Number(s): SAND-91-0422C; CONF-9105169-1; ON: DE91011737
• Resource Relation: Conference: 34. midwest symposium on circuits and systems, Monterey, CA (USA), 14-17 May 1991
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
MOSFET
COMPUTERIZED SIMULATION
CAPACITANCE
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRONIC CIRCUITS
MATHEMATICAL MODELS
TEMPERATURE DEPENDENCE
CURRENTS
ELECTRICAL PROPERTIES
FIELD EFFECT TRANSISTORS
MOS TRANSISTORS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SIMULATION
TRANSISTORS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)