Interdigitated gate electrode field effect transistor for the selective detection of nitrogen dioxide and diisopropyl methylphosphonate

Journal Article · Wed Nov 01 00:00:00 EST 1989 · Analytical Chemistry (Washington); (USA)

DOI:https://doi.org/10.1021/ac00196a008· OSTI ID:5869656

Kolesar, Jr, E S; Wiseman, J M ^[1]

---

1. Wright-Patterson Air Force Base, Dayton, OH (USA)

An interdigitated gate electrode field effect transistor (IGE-FET) coupled to an electron beam evaporated copper phthalocyanine thin film was used to selectively detect part-per-billion concentration levels of nitrogen dioxide (NO{sub 2}) and diisopropyl methylphosphonate (DIMP). The sensor is excited with a voltage pulse, and the time- and frequency-domain responses are measured. The envelopes of the magnitude of the normalized difference frequency spectrums reveal features that unambiguously distinguish NO{sub 2} and DIMP exposures.

• OSTI ID: 5869656
• Journal Information: Analytical Chemistry (Washington); (USA), Vol. 61:21; ISSN 0003-2700
• Country of Publication: United States
• Language: English

Related Subjects

54 ENVIRONMENTAL SCIENCES
01 COAL, LIGNITE, AND PEAT
NITROGEN DIOXIDE
QUANTITATIVE CHEMICAL ANALYSIS
PHOSPHONATES
ELECTRODES
MEASURING INSTRUMENTS
MEASURING METHODS
PHTHALOCYANINES
THIN FILMS
CHALCOGENIDES
CHEMICAL ANALYSIS
DYES
FILMS
HETEROCYCLIC COMPOUNDS
NITROGEN COMPOUNDS
NITROGEN OXIDES
ORGANIC COMPOUNDS
ORGANIC PHOSPHORUS COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
540120* - Environment
Atmospheric- Chemicals Monitoring & Transport- (1990-)
540320 - Environment
Aquatic- Chemicals Monitoring & Transport- (1990-)
010900 - Coal
Lignite
& Peat- Environmental Aspects