VCSEL`s bonded directly to foundry fabricated GaAs smart pixel arrays

Journal Article · Mon Dec 01 00:00:00 EST 1997 · IEEE Photonics Technology Letters

OSTI ID:585896

Pu, R; Hayes, E M; Jurrat, R; Wilmsen, C W ^[1]; Choquette, K D; Hou, H Q; Geib, K M ^[2]

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1. Colorado State Univ., Fort Collins, CO (United States). Dept. of Electrical Engineering
2. Sandia National Labs., Albuquerque, NM (United States)

This letter reports the flip-chip bonding of an 8 x 8 array of free standing VCSEL`s to a foundry fabricated GaAs metal-semiconductor field-effect transistor (MESFET) smart pixel array. The VCSEL`s have oxide defined apertures and are co-planar bonded directly to smart pixels which perform the selection function of a data filter. The V{sub th} and series resistance of the VCSEL`s were on average approximately 2.1 V and 250 {Omega}, respectively, which indicates that good electrical contact was obtainable with this process. The I{sub th} ranged between 2--4 mA, with a corresponding output power of between 400 {micro}W and >1.0 mW depending on aperture size.

• OSTI ID: 585896
• Journal Information: IEEE Photonics Technology Letters, Vol. 9, Issue 12; Other Information: PBD: Dec 1997
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
INTEGRATED CIRCUITS
FABRICATION
ELECTRICAL PROPERTIES
ELECTRIC CONTACTS
DESIGN