Current confinement and leakage currents in planar buried-ridge-structure laser diodes on n-substrate

Journal Article · Sat Jul 01 00:00:00 EDT 1989 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.29300· OSTI ID:5844196

Amann, M C; Thulke, W

An electrical device model has been developed for the planar buried-ridge-structure laser on n-type substrate. It takes into account the finite p-type contact resistivity, the two-dimensional current spreading, and the electron leakage current by drift and diffusion. Using this model, the influence of the relevant device parameters on the leakage current in InGaAsP/InP devices emitting at 1.3 /n//m is investigated in detail. It is shown that leakage currents are negligible at room temperature if the contact stripe width does not exceed the sum of the active region width and the p-type confinement layer thickness, but increase markedly with broader contact stripes and with contact resistivities above 10/sup -5//Omega/ . cm/sup 2/. The most important parameter influencing the leakage currents is the doping level of the p-InP confinement layer.

• Research Organization: Siemens A.G., Muenchen (Germany, F.R.)
• OSTI ID: 5844196
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. 25:7
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
DESIGN
CALCULATION METHODS
GALLIUM ARSENIDES
INDIUM PHOSPHIDES
LEAKAGE CURRENT
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PARAMETRIC ANALYSIS
SEMICONDUCTOR DIODES
THICKNESS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DIMENSIONS
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
MATERIALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SOLID STATE LASERS
420300* - Engineering- Lasers- (-1989)