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Title: Preparation and properties of high deposition a-Si:H films and solar cells using disilane: Final subcontract report, 1 May 1988--30 April 1989

Technical Report ·
OSTI ID:5835157

The focus of research during the second phase of SERI Contract No. ZB-7-06002-1 was the fabrication of high efficiency amorphous silicon p-i-n solar cells using intrinsic layers deposited at high deposition rate (/minus/2 nm/s) from disilane discharges. In order to achieve this goal, we utilized higher discharge excitation frequencies (10-110 MRz) to improve the intrinsic layer properties. In this report, we discuss the influence of the driving frequency at fixed fr power density on silane and disilane discharges, the properties of materials deposited from these discharges, and the performance of p-i-n devices fabricated using intrinsic layers deposited at a rate of /minus/2 nm/s from disilane 110 MRz discharges. The use of higher excitation frequency in disilane discharges increases the deposition rate and results in films with improved properties compared with those deposited at similar deposition rate by increasing the rf power. As a result of these improvements, we have fabricated a p-i-n device at a deposition rate of 2nm/s with an AM1.5 efficiency of 9/7% over an area of 1 cm/sup 2/. This result exceeds the goals of this contract. 24 refs., 16 figs., 2 tabs.

Research Organization:
Glasstech Solar, Inc., Wheatridge, CO (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5835157
Report Number(s):
SERI/STR-211-3562; ON: DE89009467
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English