Annealing studies of highly doped boron superlattices
Coevaporation of B/sub 2/ O/sub 3/ during silicon molecular-beam epitaxy at growth temperatures (/ital T//sub /ital G// ) varying from 540 to 800 /degree/C has been used to prepare superlattice structures (/ital pipi/'s) of varying boron concentration (3/times/10/sup 18/ --3/times/10/sup 20/ B cm/sup /minus/3/). The superlattices were subsequently subjected to various annealing procedures and the layers were examined by secondary ion mass spectrometry, electrochemical profiling, and cross-sectional transmission electron microscopy. A significant redistribution of boron was observed even before annealing for /ital T//sub /ital G// /gt/700 /degree/C and high boron concentrations. In addition, significant oxygen was incorporated for /ital T//sub /ital G// /le/700 /degree/C, with a growth rate of 0.5 nm s/sup /minus/1/ and a B/sub 2/ O/sub 3/ flux of 2/times/10/sup 13/ cm/sup /minus/2/ s/sup /minus/1/. After annealing, the boron diffusion coefficients were determined for the layers and found to vary significantly with /ital T//sub /ital G//.
- Research Organization:
- Microstructural Sciences Laboratory, National Research Council of Canada, Ottawa, Ontario K1A OR6, Canada (CA); CANMET, Department of Energy Mines and Resources, Ottawa, Ontario K1A OG1, Canada; Division of Physics, National Research Council of Canada, Ottawa, Ontario K1A OR6, Canada; Department of Material Science and Engineering, University of Illinois, Urbana, Illinois 61801
- OSTI ID:
- 5834259
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 66:5
- Country of Publication:
- United States
- Language:
- English
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BORON OXIDES
ANNEALING
BORON
DIFFUSION
DOPED MATERIALS
ELECTROCHEMISTRY
HIGH TEMPERATURE
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
SILICON
SUPERLATTICES
TRANSMISSION ELECTRON MICROSCOPY
VERY HIGH TEMPERATURE
BORON COMPOUNDS
CHALCOGENIDES
CHEMICAL ANALYSIS
CHEMISTRY
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
HEAT TREATMENTS
MATERIALS
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MICROSCOPY
NONDESTRUCTIVE ANALYSIS
OXIDES
OXYGEN COMPOUNDS
SEMIMETALS
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