Model of magnetically enhanced, capacitive RF discharges
- California Univ., Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences
Magnetically enhanced, capacitive RF discharges (so-called RF magnetrons or MERIE discharges) are playing an increasing role in thin film etching for integrated circuit processing. In these discharges, a weak dc magnetic field is imposed, lying parallel to the powered electrode surface. The authors determine the RF power transferred to the discharge electrons by the oscillating electron sheath in the presence of the magnetic field. Using this, along with particle and energy conservation, the authors obtain discharge parameters such as the ion flux and ion bombarding energy at the powered electrode as functions of pressure, RF power, and the magnetic field. This paper reports that some results of the model show good agreement with experiments done on a commercial MERIE system.
- Sponsoring Organization:
- National Science Foundation (NSF); National Science Foundation, Washington, DC (United States)
- OSTI ID:
- 5827707
- Journal Information:
- IEEE Transactions on Plasma Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 19:2; ISSN 0093-3813
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
HIGH-FREQUENCY DISCHARGES
MATHEMATICAL MODELS
CAPACITANCE
CONSERVATION LAWS
ELECTRODES
ELECTRONS
ENERGY
ENERGY TRANSFER
ETCHING
INTEGRATED CIRCUITS
IONS
MAGNETIC FIELDS
MAGNETRONS
PARTICLES
PLASMA SHEATH
PRESSURE DEPENDENCE
RF SYSTEMS
THIN FILMS
CHARGED PARTICLES
ELECTRIC DISCHARGES
ELECTRICAL PROPERTIES
ELECTRON TUBES
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
ELEMENTARY PARTICLES
EQUIPMENT
FERMIONS
FILMS
LEPTONS
MICROELECTRONIC CIRCUITS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
PHYSICAL PROPERTIES
SURFACE FINISHING
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)