Characterization of OMVPE-grown AlGaInN heterostructures

Book · Wed Dec 31 00:00:00 EST 1997

OSTI ID:581092

Bour, D P; Chung, H F ^[1]; Goetz, W ^[2]

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1. Xerox Palo Alto Research Center, CA (United States). Electronic Materials Lab.
2. Hewlett-Packard Optoelectronics Div., San Jose, CA (United States); and others

The authors report on the OMVPE growth and characterization of AlGaInN and its heterostructures, including measurements of electrical properties (Hall), optical properties (photo- and cathodo-luminescence), structural characteristics (x-ray diffraction and TEM); and also the emission of InGaN/AlGaN heterostructures subject to optical and electrical pumping.

• OSTI ID: 581092
• Report Number(s): CONF-961202-; ISBN 1-55899-353-3; TRN: IM9807%%169
• Resource Relation: Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of III-V nitrides; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Moustakas, T.D. [ed.] [Boston Univ., MA (United States)]; Akasaki, I. [ed.] [Meijo Univ., Nagoya (Japan)]; Monemar, B.A. [ed.] [Linkoeping Univ. (Sweden)]; PB: 1278 p.; Materials Research Society symposium proceedings, Volume 449
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
ALUMINIUM NITRIDES
GALLIUM NITRIDES
INDIUM NITRIDES
HETEROJUNCTIONS
PHYSICAL PROPERTIES
MICROSTRUCTURE
VAPOR PHASE EPITAXY
ELECTRICAL PROPERTIES
OPTICAL PROPERTIES
EXPERIMENTAL DATA
OPTICAL PUMPING